| PART |
Description |
Maker |
| FDC9216 FDC9216B |
FLOPPY DISK DATA SEPARATOR FDDS
|
List of Unclassifed Manufacturers
ETC[ETC]
http://
|
| HDC9227 |
High Performance Dual Data Separator DDS
|
Standard Microsystems
|
| BH6629BFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| BH6628AFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| NJM3470-3470A NJM3470 NJM3470A NJM3470AD NJM3470D |
FDD READ AMPLIFIER SYSTEM
|
New Japan Radio
njr
|
| AN8212K |
FDD Spindle Motor Controller
|
Panasonic
|
| BA6580DK |
Read/Write Amplifier for FDD
|
Rohm
|
| BA6589K |
Read/Write Amplifier for FDD
|
Rohm
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| BA6588K BA6587K |
(BA6587K / BA6588K) Read/Write Amplifier for FDD
|
Rohm
|
